Open Transistors Fault-Tolerant Schemes of Three-Phase Dual Active Bridge DC-DC Converters

Authors

  • Jonathan Emmanuel Ochoa Sosa Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados (IITEMA),Universidad Nacional de Rio Cuarto https://orcid.org/0000-0001-8104-3579
  • Rubén Orlando Núñez Universidad Nacional de Rafaela (UNRaf), CIT Rafaela/CONICET. Santa Fe, Argentina
  • Germán Gustavo Oggier Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados (IITEMA), Universidad Nacional Rio Cuarto https://orcid.org/0000-0002-7136-0463
  • Guillermo Oscar García Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados (IITEMA), Universidad Nacional Rio Cuarto https://orcid.org/0000-0002-4652-8893

Keywords:

Bidirectional DC-DC Converter, Converter Failures, Fault Tolerance, Three-Phase Dual Active Bridges Converter, Three-Phase Transformers, bidirectional DC-DC converter, Converter failure, Fault tolerant, fault tolerance, Three-Phase dual active bridges converter, three phase transformers

Abstract

This work proposes fault-tolerant schemes for open-transistor faults applied to three-phase dual active bridge converters (TPDABC), using different transformers: star-star, delta-delta, and delta-star. The proposal consists of operating the TPDABC as a single-phase dual active bridge converter, modifying the modulation strategy. This strategy avoids the need for additional components, which allows the converter to continue operating after an event of open transistor failure. The expressions of the average power when the converter operates in the fault-tolerant modes are determined. The analysis determines that the maximum power that can be transferred using the transformer delta-star is larger than the power obtained for star-star and delta-delta connections. Simulation results allow the proposed schemes to be validated.

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Author Biographies

Jonathan Emmanuel Ochoa Sosa, Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados (IITEMA),Universidad Nacional de Rio Cuarto

He was born in San Francisco del Monte de Oro, San Luis, Argentina, in October 1988. He received the degree of Electronic Engineer (2017) from the Universidad Nacional de San Luis (UNSL), San Luis, Argentina. Since 2017 he is a member of the National Council of Scientific and Technical Research (CONICET) and is pursuing a Doctorate in Engineering Sciences at the the National University of Río Cuarto (UNRC). Cordoba Argentina. He has been a member of the Applied Electronics Group (GEA) since 2017. His research interests include power electronics, microgrids, detection, diagnosis and fault tolerance of electronic power converters.

Rubén Orlando Núñez, Universidad Nacional de Rafaela (UNRaf), CIT Rafaela/CONICET. Santa Fe, Argentina

He was born in Libertad, Misiones, Argentina, in 1980. He received the Electronics Engineer degree in 2011 from the National University of Misiones, Misiones, Argentina. Obtained the degrees of Doctor of Engineering Sciences at the UNRC, Río Cuarto, Córdoba, Argentina. He is a researcher in the Department of Technologies and Innovation for Development of the National University of Rafaela. His areas of interest include power electronics, electric machines, and renewable energy conversion.

Germán Gustavo Oggier, Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados (IITEMA), Universidad Nacional Rio Cuarto

(M’10) was born in Río Ceballos, Córdoba, Argentina. He received the Electr. Eng. degree and the M.Sc. degree in electrical engineering from the UNRC, Argentina, in 2003 and 2006, respectively, and the Doctor degree in control systems from the Universidad Nacional del Sur, Buenos Aires, Argentina, in 2009. He is currently a Professor in the GEA, UNRC, and a researcher of CONICET, Buenos Aires, Argentina. His current research interests include power electronics, electric vehicles, and renewable energy conversion.

Guillermo Oscar García, Instituto de Investigaciones en Tecnologías Energéticas y Materiales Avanzados (IITEMA), Universidad Nacional Rio Cuarto

(M’86–S’90–M’95–SM’01) was born in Río Cuarto, Argentina, in 1954. He received the electrical and electronics engineering degree from the Universidad Nacional de Córdoba, Córdoba, Argentina, in 1981 and the M.Sc. and Dr. degrees in electrical engineering from the Universidad e Federal do Rio de Janeiro, Rio de Janeiro, Brazil, in 1990 and 1994, respectively. Since 1994, he has been with UNRC, where he is currently the Director of GEA, and a Researcher of CONICET, Buenos Aires, Argentina. His research interests include power electronics, electric vehicles, and renewable energy conversion.

3442

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Published

2021-06-01

How to Cite

Ochoa Sosa, J. E., Núñez, R. O., Oggier, G. G. . ., & García, G. . O. (2021). Open Transistors Fault-Tolerant Schemes of Three-Phase Dual Active Bridge DC-DC Converters. IEEE Latin America Transactions, 19(3), 385–395. Retrieved from https://latamt.ieeer9.org/index.php/transactions/article/view/3442

Issue

Vol. 19 No. 3 (2021): Ordinary Issue

Section

Articles

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