Comparison of Two Harmonic Load-Pull Systems Using Frequency-Domain and Time-Domain Measurements for Evaluating GaN Transistor Output Power and Efficiency
Keywords:
drain efficiency, GaN, harmonic load-pull, output power, power amplifierAbstract
Two active real-time harmonic load-pull systems were developed: one operating in the time domain (TD-AHLP) and the other one in the frequency domain (FD-AHLP). The main distinction between them lies in their receivers: the first utilizes a four-channel oscilloscope, while the second uses a vector network analyzer. Measurements of output power and drain efficiency were performed using both load-pull systems on a MACOM CGH40010F GaN-HEMT transistor, biased as a Class-B power amplifier (VGS = -2.92 V, VDS = 28 V, IDS = 200 mA), at a fundamental frequency of 1 GHz. The performance of both systems was compared to evaluate the harmonic loads up to their third harmonic, output power, drain efficiency, and power gain of a Harmonic Tuned Power Amplifier (HTPA). Results demonstrate high consistency between the two systems, with mean relative deviations below 3% for both output power and drain efficiency. Both systems identify specific second-harmonic impedance regions along the periphery of the Smith chart where performance metrics remain nearly constant and largely independent of the second-harmonic reactance.
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