Word-Line-Aware Garbage Collector for QLC-based NAND Flash Memories
Keywords:
NAND-Flash Memory, Garbage Collector, QLC Cells, Word-Line AwarenessAbstract
The Garbage Collector (GC) on NAND Flash memories is one of the most expensive operations in modern Solid-State Drives (SSD). However, it is essential to claim more free pages on SSDs. Various researches attempt to reduce the penalty of GC operations at different levels of the Input/Output (IO) path. Nevertheless, within the reviewed related works in Host-side, Open-Channel SSDs, and Device-side areas, we did not observe overlap with our research scope in how the logical pages are scattered in the NAND Word-Lines (WL) at the physical level, and how they impact performance degradation during the Garbage Collection operation. To reduce this bridge gap, we propose a new GC policy: Word-Line Aware Garbage Collector (WLA-GC). The WLA-GC focuses on reducing the Garbage Collector overhead by observing the physical distribution of valid logical pages within the WLs of a NAND Flash block to best select the victim blocks to be erased. Based on these criteria, the GC decisions are made by considering the latency the victim block will take to be fully erased. Analytical modeling shows that the proposed method outperforms the Vanilla GC in all cases, with an average performance of 25.4%. In comparison, the experimental results present a performance improvement of 55% in best-case scenarios.
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