Selection of Power Semiconductor Devices for a Standalone System based on Power Loss Analysis
Keywords:
Analytical Model, Power Losses Analysis, Power Semiconductor Devices, Standalone Photovoltaic-Battery System (SBPS)Abstract
This paper presents a comprehensive methodology for the selection of power semiconductor devices in a standalone photovoltaic (PV)-battery system (SPBS) based on power loss analysis. The SPBS configuration is modeled analytically, and the waveforms for the system are obtained in a Hardware-In-the-Loop (HIL) and by simulation environment using Matlab. The study focuses on identifying the most cost-effective power semiconductor devices by assessing power loss at three distinct operating points. The algorithm evaluates losses in each component, facilitating the selection of optimal devices for enhanced system performance. The evaluation is performed for different operational modes, incorporating worst-case scenarios for current and voltage, providing a robust analysis of system behavior. By emphasizing the importance of power loss analysis in isolated PV systems, this research contributes to the advancement of energy efficiency in SPBS. The proposed methodology enables the identification of power semiconductor devices experiencing the highest losses, aiding in the selection of components that minimize overall losses and maximize energy utilization from PV panels and batteries.
Downloads
References
J. L. Hudgins, “Power electronic devices in the future,” IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 1, no. 1, pp. 11–17, 2013. doi: https://doi.org/10.1109/JESTPE.2013.2260594
E. Fernández, L. Romeral, and V. Sala, “Power converters and its application in electric traction systems. analysis present and future technologies,” IEEE Latin America Transactions, vol. 14, no. 2, pp.
–638, 2016. doi: https://doi.org/10.1109/TLA.2016.7437203
C. Xiao, G. Chen, and W. G. H. Odendaal, “Overview of power loss measurement techniques in power electronics systems,” IEEE Transactions on Industry Applications, vol. 43, no. 3, pp. 657–664, 2007. doi: https://doi.org/10.1109/TIA.2007.895730
S. Yang, D. Xiang, A. Bryant, P. Mawby, L. Ran, and P. Tavner, “Condition monitoring for device reliability in power electronic converters: A review,” IEEE Transactions on Power Electronics, vol. 25, no. 11, pp. 2734–2752, 2010. doi: https://doi.org/10.1109/TPEL.2010.2049377
E. O. Prado, H. C. Sartori, and J. R. Pinheiro, “How to select power transistors for static converters applications?” in 2018 13th IEEE International Conference on Industry Applications (INDUSCON), 2018. doi: https://doi.org/10.1109/INDUSCON.2018.8627069 pp. 138–143.
J. Millán, P. Godignon, X. Perpiñà, A. Pérez-Tomás, and J. Rebollo, “A survey of wide bandgap power semiconductor devices,” IEEE Transactions on Power Electronics, vol. 29, no. 5, pp. 2155–2163, 2014. doi: https://doi.org/10.1109/TPEL.2013.2268900
E. O. Prado, P. C. Bolsi, H. C. Sartori, and J. R. Pinheiro, “An overview about si, superjunction, sic and gan power mosfet technologies in power electronics applications,” Energies, vol. 15, no. 14, 2022. doi:
https://doi.org/10.3390/en15145244
J. P. Kozak, R. Zhang, M. Porter, Q. Song, J. Liu, B. Wang, R. Wang, W. Saito, and Y. Zhang, “Stability, reliability, and robustness of gan power devices: A review,” IEEE Transactions on Power Electronics, vol. 38, no. 7, pp. 8442–8471, 2023. doi: https://doi.org/10.1109/TPEL.2023.3266365
C. Zhang, J. Wang, K. Qu, B. Hu, Z. Li, X. Yin, and Z. J. Shen, “Wbg and si hybrid half-bridge power processing toward optimal efficiency, power quality, and cost tradeoff,” IEEE Transactions on Power Electronics, vol. 37, no. 6, pp. 6844–6856, 2022. doi: https://doi.org/10.1109/TPEL.2021.3138464
Z. Chen, S. Liu, L. Shi, and F. Ji, “Power loss analysis and comparison of two full-bridge converters with auxiliary networks,” IET Power Electronics, vol. 5, pp. 1934–1943(9), 2012. doi: https://doi.org/10.1049/ietpel.2012.0218
A. Ayachit and M. Kazimierczuk, “Power losses and efficiency analysis of the quadratic buck converter in ccm,” in 2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS), 2014. doi: https://doi.org/10.1109/MWSCAS.2014.6908452 pp. 463–466.
K. Lee, H. Shin, and J. Choi, “Comparative analysis of power losses for 3-level npc and t-type inverter modules,” in 2015 IEEE International Telecommunications Energy Conference (INTELEC), 2015. doi:
https://doi.org/10.1109/INTLEC.2015.7572357 pp. 1–6.
R. T. Naayagi, “Selection of power semiconductor devices for the dab dc-dc converter for aerospace applications,” in 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, 2015. doi: https://doi.org/10.1109/PEDS.2015.7203479 pp. 499–502.
K. Peng, S. Eskandari, and E. Santi, “Analytical loss model for power converters with sic mosfet and sic schottky diode pair,” in 2015 IEEE Energy Conversion Congress and Exposition (ECCE), 2015. doi:
https://doi.org/10.1109/ECCE.2015.7310522 pp. 6153–6160.
E. Gurpinar and A. Castellazzi, “Single-phase t-type inverter performance benchmark using si igbts, sic mosfets, and gan hemts,” IEEE Transactions on Power Electronics, vol. 31, no. 10, pp. 7148–7160, 2016. doi: https://doi.org/10.1109/TPEL.2015.2506400
I. Castro, J. Roig, R. Gelagaev, B. Vlachakis, F. Bauwens, D. G. Lamar, and J. Driesen, “Analytical switching loss model for superjunction mosfet with capacitive nonlinearities and displacement currents for dc–dc power converters,” IEEE Transactions on Power Electronics, vol. 31, no. 3, pp. 2485–2495, 2016. doi: https://doi.org/10.1109/TPEL.2015.2433017
M. H. Ahmed, M. Wang, M. A. S. Hassan, and I. Ullah, “Power loss model and efficiency analysis of three-phase inverter based on sic mosfets for pv applications,” IEEE Access, vol. 7, pp. 75 768–75 781,
doi: https://doi.org/10.1109/ACCESS.2019.2922741
J. W. Kwak and D. Brian Ma, “Comparative topology and power loss analysis on 48v-to-1v direct step-down non-isolated dc-dc switched-mode power converters,” in 2020 IEEE Energy
Conversion Congress and Exposition (ECCE), 2020. doi: https://doi.org/10.1109/ECCE44975.2020.9235451 pp. 943–949.
W. Wang, Q. Song, S. Zhang, Y. Li, M. Ahmad, and Y. Gong, “The loss analysis and efficiency optimization of power inverter based on sic mosfets under the high-switching frequency,” IEEE Transactions on Industry Applications, vol. 57, no. 2, pp. 1521–1534, 2021. doi: https://doi.org/10.1109/TIA.2020.3045116
E. O. Prado, P. C. Bolsi, H. C. Sartori, and J. R. Pinheiro, “Simple analytical model for accurate switching loss calculation in power mosfets using non-linearities of miller capacitance,” IET Power Electronics, vol. 15, no. 7, pp. 594–604, 2022. doi: https://doi.org/10.1049/pel2.12252
L. L. Carralero, H. M. Gomes, F. F. Costa, F. A. da C. Bahia, A. M. Andrade, J. R. Pinheiro, and A. P. Tahim, “An isolated standalone photovoltaic-battery system for remote areas applications,” Journal of Energy Storage, vol. 55, p. 105568, 2022. doi: https://doi.org/10.1016/j.est.2022.105568
T. Solar. (2020) Trina solar modules datasheet - tsm-de17m.t0(ii). [Online]. Available: https://static.trinasolar.com/sites/default/files/AP_Datasheet_TallmaxM_DE17M.T0(II).pdf
H. Solar. (2020) Huawei wmm20ah00 user manual and datasheet. [Online]. Available: https://solar.huawei.com/br/professionals/all-products/TP4860H/WMM20AH00.pdf
A. Blinov, D. Vinnikov, and T. Jalakas, “Loss calculation methods of half-bridge square-wave inverters,” Elektronika ir Elektrotechnika, vol. 113, no. 7, pp. 9–14, 2011. doi:
http://dx.doi.org/10.5755/j01.eee.113.7.604
D. Graovac, M. Purschel, and A. Kiep, “Igbt power losses calculation using the data sheet parameters,” Infineon application note, January 2009. [Online]. Available: https://community.infineon.com/gfawx74859
J. Biela, M. Schweizer, S. Waffler, and J. W. Kolar, “Sic versus si—evaluation of potentials for performance improvement of inverter and dc–dc converter systems by sic power semiconductors,” IEEE
Transactions on Industrial Electronics, vol. 58, no. 7, pp. 2872–2882, 2010. doi: https://doi.org/10.1109/TIE.2010.2072896
